The study of Schottky barrier (SB) MOSFETs with metallic source and drain contacts is expanding as a result of recent developments in the semiconductor industry. Instead of the usual impurity-doped ...
New surface-mount automotive-grade silicon-carbide (SiC) Schottky barrier diodes (SBDs) from ROHM Semiconductor are intended to improve insulation resistance by increasing the creepage distance ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide ...
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...
Metal-insulator-metal (MIM) diodes might just be the technology that allows electronics achieve the next big leap in processing speed. Research into diode design conducted at the Oregon State ...
Multilayer stacks of graphene and other stable, atomically thin, two-dimensional materials such as boron nitride, the metallic dichalcogenides and layered oxides 1 offer the prospect of creating a new ...
The proof-of-concept uses a van der Waals heterostructure with 2D materials: NbSe 2 – Nb 3 Br 8 – NbSe 2, and is superconducting on one direction, and normally-conducting in the other. Compared with ...