KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Omron has introduced 400V and 600V 110°C versions of its G3VM photo mos isolated electronic relay family, as well as a 40V 2Ω type in the 1.5 x 2.5 x 1.3mm 4pin VSON package. With G3VM-401xY2 and G3VM ...

A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...

Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other ...

ICs that go into space have testing requirements that exceed those for Earth-bound devices. I explained the process in Test power ICs to survive radiation. Now, I'll look at what happens to power ...

The holiday gave me a chance to play with bipolar transistor mosfet drivers again. And things did not go quite as planned. I had been using the circuit on the right quite happily from a signal ...

Process devices operate when an input level, such as voltage, reaches the required value for the device to operate. The transistor is on, when the input voltage is greater than or equal to \(0.7 V\).

The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...