Power demands of computing and telecom applications are driving rapid developments in semiconductor components for power conversion. By looking at next-generation microprocessor requirements — a ...

The super junction MOSFET market has opportunities in high and low voltage types, deep trench technology, and multiple epitaxy technology. Applications in electric vehicles, consumer electronics, and ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of “TW007D120E,” a 1200V ...

Toshiba is test-sampling shipments of the TW007D120E, 1,200V trench-gate SiC mosfet primarily intended for power supply ...

Trench structures will halve the on-resistance of silicon carbide power mosfets, claimed Rohm. “Compared to existing planar-type SiC mosfets, on-resistance is reduced by 50% in the same chip size, ...

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...

MOSFET makers in Taiwan have seen a ramp-up in shifted orders, particularly for SGT (split-gate-trench) MOSFETs for IT applications, as delivery times at their bigger international peers have been ...

MOSFET-based load switches, whether as an integrated circuit (IC) or built with discrete components, continue to be popular choices for many engineers. They are favored in power-switching applications ...

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the launch of its new 7 th-generation 24V MXT LV MOSFET 1 specifically designed for ...

MOSFET-based load switches, whether as integrated circuits or built with discrete components, continue to be popular choices for many engineers for applications with power-switching needs, such as ...